HJT (Heterojunction)
Heterojunction cell technology combining crystalline and amorphous silicon, achieving very high efficiencies.
Also known as: Heterojunction Cell, HJT Cell, SHJ
What Is HJT?
HJT (Heterojunction Technology) is an advanced solar cell technology that combines crystalline silicon (c-Si) with ultra-thin layers of amorphous silicon (a-Si). This combination of different material structures (heterojunction) enables excellent passivation and high efficiencies.
Structure
An HJT cell is symmetrically composed of:
- Transparent conductive oxide layer (TCO)
- Amorphous silicon layer (n-doped)
- Intrinsic amorphous layer (i-a-Si)
- Crystalline silicon wafer (n-type)
- Intrinsic amorphous layer
- Amorphous silicon layer (p-doped)
- Transparent conductive oxide layer
Key Specifications
| Property | Value |
|---|---|
| Cell efficiency | 24—26.5% |
| Module efficiency | 22—24% |
| Temperature coefficient | approx. -0.24%/°C (best value) |
| Bifaciality | 85—95% |
| LID | No LID |
Advantages
- Excellent temperature coefficient — ideal for warm locations
- No light-induced degradation (LID)
- High bifaciality — more yield from rear-side utilisation
- Fewer process steps in manufacturing
Practical Tip
HJT modules are especially worthwhile at high ambient temperatures and for tilt-mounted systems where the high bifaciality provides additional yield. They are currently slightly more expensive than TOPCon.
Related Terms
TOPCon
Tunnel Oxide Passivated Contact -- advanced cell technology with a tunnel oxide layer achieving efficiencies above 24%.
PERC
Passivated Emitter and Rear Cell -- cell technology with an additional passivation layer on the rear side for higher efficiency.
Solar Cell
Semiconductor device that converts sunlight directly into electrical current through the photoelectric effect.
Efficiency
Ratio of usable electrical energy to incident solar energy -- indicates the effectiveness of a solar cell or system.
Temperature Coefficient
Metric indicating how much a solar module's power decreases per degree Celsius of temperature rise (typical: -0.3%/°C).